E-Beam Lithography : Baseline Process for 20-30nm Linewidth E-Beam Lithography 10nm E-Beam Lithography
PECVD: CVD-2: Low-Stress Si3N
Dry Processing
UNAXIS ICP RIE for III-V: GaAs AlGaAs InP InP-AlInAs-GaInAs GaAs Nanostructure Etching / E-beam Dosage/Line-width/Sidewall-profile NEXX RIE : RIE-6: sample surface temperature RIE-6: SiO2 etching RIE-6: Si3N4 etching RIE-6: GaAs etching RIE-6: InAs etching
UNAXIS ICP RIE for III-V: